61913 tkim tc-00002888/d2404qa tsim tb-00000610 no.8054-1/7 http://onsemi.com semiconductor components industries, llc, 2013 june, 2013 2SK3816 n-channel power mosfet 60v, 40a, 26m , to-262-3l/to-263-2l features ? on-resistance r ds (on)1=20m (typ.) ? input capacitance ciss=1780pf(typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current (dc) i d 40 a drain current (pulse) i dp pw 10 s, duty cycle 1% 160 a allowable power dissipation p d 1.65 w tc=25 c50w continued on next page. package dimensions unit : mm (typ) package dimensions unit : mm (typ) 7537-001 7535-001 ordering number : en8054a ordering & package information marking electrical connection device package shipping memo 2SK3816-1e to-262-3l (to-262) 50pcs./tube pb free 2SK3816-dl-1e to-263-2l (sc-83, to-263) 800pcs./reel packing type : dl 1 : gate 2 : drain 3 : source to-262-3l 10.0 5.3 1.27 1.47 0.8 2.54 2.54 13.08 9.2 7.9 1.2 2.4 1.75 0.9 3.0 4.5 8.0 1.3 0.5 1 2 3 1 : gate 2 : drain 3 : source 4 : drain to-263-2l 10.0 5.3 1.27 0.8 2.54 2.54 13.4 9.2 7.9 1.4 1.2 0 to 0.25 2.4 1.75 0.9 3.0 1.35 0.254 4.5 8.0 1.3 0.5 123 4 2SK3816-1e 2SK3816-dl-1e dl k3816 lot no. 1 3 2, 4
2SK3816 no.8054-2/7 continued from preceding page. parameter symbol conditions ratings unit channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 60 mj avalanche current *2 i av 40 a note : * 1 v dd =20v, l=50 h, i av =40a (fig.1) * 2 l 50 h, single pulse electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0v 1 a gate to source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d =20a 16 27 s static drain to source on-state resistance r ds (on)1 i d =20a, v gs =10v 20 26 m r ds (on)2 i d =20a, v gs =4v 28 40 m input capacitance ciss v ds =20v, f=1mhz 1780 pf output capacitance coss 266 pf reverse transfer capacitance crss 197 pf turn-on delay time t d (on) see fig.2 16.5 ns rise time t r 160 ns turn-off delay time t d (off) 160 ns fall time t f 160 ns total gate charge qg v ds =30v, v gs =10v, i d =40a 40 nc gate to source charge qgs 6.5 nc gate to drain ?miller? charge qgd 11.5 nc diode forward voltage v sd i s =40a, v gs =0v 1.05 1.5 v fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. dut 50 10v 0v v dd l 2SK3816 50 rg g s d pw=10 s d.c. 1% p. g 50 g s d i d =20a r l =1.5 v dd =30v v ou t 2SK3816 v in 10v 0v v in
2SK3816 no.8054-3/7 it07814 it07815 it07812 it07813 0.2 0.4 0.6 1.0 0.8 1.2 2.0 1.8 1.6 1.4 0 0 5 10 25 15 50 30 20 40 45 35 --50 --25 150 030 10 15 20 25 5 100 1000 it07819 it07817 it07816 0.1 1.0 23 57 3 10 1.0 7 7 7 5 5 3 2 3 5 2 3 2 3 2 10 2 3 57 2 3 57 3456789 210 0 50 70 60 20 30 40 10 50 60 20 30 40 10 0 0 25 50 75 100 125 7 5 5 v gs =3v 6v 8v 10v tc=25 c i d =20a tc=75 c 25 c --25 c i d =20a, v gs =4v i d =20a, v gs =10v tc= --25 c 75 c 25 c v ds =10v coss ciss crss it07818 0.1 23 1.0 57 23 57 23 5 10 10 100 5 7 2 3 5 7 2 3 5 t d (off) t f t d (on) t r v dd =30v v gs =10v 4v i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- tc | y fs | -- i d i f -- v sd ciss, coss, crss -- v ds sw time -- i d static drain-to-source on-state resistance, r ds (on) -- m static drain to source on-state resistance, r ds (on) -- m gate to source voltage, v gs -- v drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a case temperature, tc -- c drain current, i d -- a forward transfer admittance, | y fs | -- s diode forward voltage, v sd -- v forward current, i f -- a drain to source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns 0.5 1.0 2.0 1.5 2.5 4.5 4.0 3.5 3.0 0 0 5 10 25 15 30 20 40 50 35 25 c --25 c 25 c tc= --25 c 75 c tc=75 c v ds =10v 1.5 1.2 0.3 0.6 0.9 0 0.01 0.1 1.0 10 100 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 tc=75 c 25 c --25 c v gs =0v f=1mhz
2SK3816 no.8054-4/7 it07811 it17035 0 0 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 0.01 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 2 3 5 7 1.0 10 100 23 57 23 57 23 57 1.0 0.1 10 100 i dp =160a(pw 10 s) i d =40a 100 s 1ms 10ms 100ms dc operation 10 s operation in this area is limited by r ds (on). it07820 0 5 10 20 15 25 30 40 35 0 2 4 6 8 9 1 3 5 7 10 v ds =30v i d =40a it07822 0 0 20 40 60 80 100 120 60 50 140 160 40 30 20 10 a s o p d -- ta p d -- tc v gs -- qg gate to source voltage, v gs -- v amibient tamperature, ta -- c allowable power dissipation, p d -- w case tamperature, tc -- c allowable power dissipation, p d -- w drain current, i d -- a tc=25 c single pulse total gate charge, qg -- nc drain to source voltage, v ds -- v
2SK3816 no.8054-5/7 outline drawing land pattern example 2SK3816-dl-1e mass (g) unit 1.5 * for reference mm unit: mm
2SK3816 no.8054-6/7 outline drawing 2SK3816-1e mass (g) unit 1.6 * for reference mm
2SK3816 ps no.8054-7/7 note on usage : since the 2SK3816 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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